Cubic‐structured tin selenide thin film as a novel solar cell absorber Tin selenide thin film with a simple cubic crystalline structure (SnSe‐CUB) of unit cell dimension a = 11.9632 Å is obtained via chemical deposition on a tin sulfide (SnS‐CUB) thin film base layer of simple cubic structure of a = 11.5873 Å. selenide (InSe), a layered semiconductor of the III−VI family with a direct band gap of ∼1.25 eV at room temperature,24 is one of these exceptions since its lowermost conduction band basically stems from antibonding In s states, whereas its uppermost valence band has a … For Purchase related inquiries, kindly mail us at sales@nanoshel.com, sales5@nanoshel.com, cmg@nanoshel.com. Safety Information. We supply low price tin diselenide in several different forms for a range of applications. Tin(II) selenide is a narrow band-gap (IV-VI) semiconductor and has received considerable interest for applications including … Department of Educational Science, Hunan First Normal University, Changsha 410205, China, c An optical band gap of 1–1.27 eV, ... X-ray diffraction patterns of tin selenide thin films formed at 200 °C by the reaction of evaporated tin thin film of 50 nm thickness (A) and 100 nm (B) in selenium vapour from a chemically deposited selenium thin film of 300 nm in thickness. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. It is thus capable of absorbing a major portion of solar energy hence its use in fabricating solar cells. Tin selenide is a narrow band-gap (IV-VI) semiconductor and has received considerable interest for applications including low-cost photovoltaics and memory-switching devices. formally request permission using Copyright Clearance Center. Brotons-Gisbert M, Andres-Penares D, Suh J, et al. Abstract. It is also suitable for various optoelectronic applications like memory switching devices, light emitting However, the applications of selenides in high-performance PEC devices are greatly hindered via inducing oxygen into the lattice and generating high-density defects, which result in their environmental instability and high recombination of charge carriers. Tin selenide, also known as stannous selenide, is an inorganic compound with the formula (SnSe), where Tin has a +2 oxidation state. Tin Selenide Powder (SnSe) is a narrow band gap, binary semiconductor, suitable for various optoelectronic applications like memory switching devices, photovoltaic, light emitting devices (LED), and holographic recording systems. Nano Lett 2016;16:3221–9. Band gap expansion, shear inversion phase change behaviour and low-voltage induced crystal oscillation in low-dimensional tin selenide crystals† Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. The bulk properties of SnSe have been analyzed by several researchers and concluded that it belongs to the class of layered semiconductors. Tin selenide (SnSe) thin films have been prepared by encapsulated selenization technique. Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400–1000 nm. means it is good for absorption of the rays. It is often alloyed with lead to make lead tin telluride, which is used as an infrared detector material.. Tin telluride normally forms p-type semiconductor (Extrinsic semiconductor) due to tin vacancies and is a low temperature superconductor. Tin (II) selenide is a narrow band-gap (IV-VI) semiconductor and has received considerable interest for applications including low-cost photovoltaics and memory-switching devices. On the basis of the analysis of the composition and structure, Se element filling in the defects during selenization is critical for suppressing the recombination of charge carriers and reducing the possibility of oxygen bonding to Sn in the bulk of the film. with the reproduced material. Authors contributing to RSC publications (journal articles, books or book chapters) First principles study of electronic structure and thermoelectric transport in tin selenide and phase separated tin selenide–copper selenide alloy. We benefited from Rutherford Backscattering Spectrometry with 2 MeV 4He ions to determine the depth profile of the elements in tin selenide. It is also suitable for various optoelectronic applications like memory switching devices, light emitting devices (LED), holographic recording systems among others. State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China As SnSe has the energy gap of about 1.0 eV it may be utilized as an efficient material for solar energy conversion. This may take some time to load. UV–visible spectroscopy was used for energy band gap determination. Signal word Danger. of the whole article in a thesis or dissertation. Please feel free to send us your requirement about our products, Nanotechnology for Health workers: COVID-19 Control & Prevention, Automatic Mist Based Sanitizer Dispensing Unit, freedomainzone on Metal Oxide Nanoparticles, Adelmsteals on Metal Oxide Nanoparticles, swati sharma on Metal Oxide Nanoparticles. Read "Band gap expansion, shear inversion phase change behaviour and low-voltage induced crystal oscillation in low-dimensional tin selenide crystals, Dalton Transactions" on DeepDyve, the largest online rental service for scholarly research with thousands of academic publications available at … The band gap energy was expected from the Equation (12-14). Tin Selenide: Extensive attention has been paid in search of new semiconducting materials for efficient solar energy conversion. Abstract. Selenide with a narrow band gap can be used as a promising photoelectrode in photoelectrochemical (PEC) water splitting. or in a thesis or dissertation provided that the correct acknowledgement is given The band gap of SnSe 2 can be tuned from bulk to few-layer thin films with a wide electromagnetic spectrum range (from 1–2 eV). Been used as memory switching devices, holographic recording systems, and it arranged. ) sulfide, by contrast, is formed from cheap, earth abundant elements, it a. 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